Photoelectrochemical etching of ultra-wide bandgap β-Ga2O3 semiconductor in phosphoric acid and its optoelectronic device application

The etching process of an ultra-wide bandgap beta-Ga2O3 semiconductor is challenging, owing to its high chemical robustness and bond strength. We demonstrated the photoelectrochemical (PEC) etching of beta-Ga2O3 using phosphoric acid as electrical potential and temperature were varied, both of which were proportional to the etching rate. Once initiated at defect sites, the etch pit anisotropically proceeded along the [001] direction with an activation energy of 46.3 kJ/mol, which is much lower than previously reported values. The PEC etching rate was as high as 0.7 gm/min in the [001] direction at a bias of 20 V and temperature of 160 degrees C. The new facet exposed by PEC etching in phosphoric acid was found to be (-201), which is assumed to be stable because the Ga-terminated (-201) surface is converted into an O-terminated one after the removal of the Ga on the surface. The optoelectronic performance, including the responsivity and response/decay characteristics, was greatly improved, indicating the effective removal of defects by PEC etching. Our findings are expected to play an important role in the fabrication of an ultra-wide bandgap beta-Ga2O3 semiconductor devices, thus paving the way for improved optoelectronic device performance.

Automated summary

The etching process of beta-Ga2O3 semiconductor using phosphoric acid as demonstrated in this study showed an anisotropic etch pit formation along the [001] direction. The new exposed facet (-201) was found to be stable, and the optoelectronic performance was greatly improved through the effective removal of defects by PEC etching.