4.7 Article

High-resolution additive direct writing of metal micro/nanostructures by electrohydrodynamic jet printing

期刊

APPLIED SURFACE SCIENCE
卷 543, 期 -, 页码 -

出版社

ELSEVIER
DOI: 10.1016/j.apsusc.2020.148800

关键词

E-jet printing; Mask-free direct writing; Nanoscale printing resolution; Metal micro/nanoelectrodes; Fully printed graphene photodetectors

资金

  1. National Natural Science Foundation of China [61925307, 61727811, 91748212, U1613220, 61821005]
  2. External Cooperation Program of the Chinese Academy of Sciences [173321KYSB20170015]
  3. Youth Innovation Promotion Association of the Chinese Academy of Sciences [Y201943]
  4. LiaoNing Revitalization Talents Program [XLYC1807006]

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The combination of E-jet printing with chemical etching successfully produced conductive metal structures with fine straight-line patterns and grid patterns, providing a promising mask-free approach for the fabrication of micro/nanoelectronic devices.
Patterned conductive structures have attracted significant attention as important components of printed and flexible micro/nanodevices. However, the fabrication of conductive micro/nanostructures with controlled and well-organized morphologies is a key challenge in the development and application of micro/nanoelectronic devices based on low-dimensional materials. To meet the requirements of depositing conductive structures on specific substrates, electrohydrodynamic jet (E-jet) printing, developed as a simple and effective method for fabricating micro/nanopatterns of polymers, was combined with a conventional wet metal etching process for patterning conductive metals on polymer substrates. Under optimized experimental conditions, we achieved fine straight-line patterns with a line spacing of 1 mu m at a nanoscale printing resolution (average line width: 68 nm) and grid patterns with variable spacings and grid line widths, down to size of 871 nm. Furthermore, fully printed graphene photodetectors were obtained through in situ direct writing, and their photoelectric response to a change in photocurrent of 0.22 mu A was demonstrated. The results suggest that combining E-jet printing with chemical etching is a promising mask-free approach for producing conductive metal patterns for micro/nanoelectronic devices.

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