期刊
APPLIED SURFACE SCIENCE
卷 540, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.apsusc.2020.148389
关键词
2D materials; Schottky contact; Ohmic contact; Field effect transistors; Phototransistor; Hybrid memory device
类别
资金
- Council of Scientific and Industrial Research (CSIR), India [09/1129(0007)/2017-EMRI]
- Department of Science and Technology (Nano Mission), Government of India [SR/NM/NS-1125/2016]
- PARAM Shivay Facility under the National Supercomputing Mission, Government of India at the Indian Institute of Technology, Varanasi
A graphene-based van der Waals heterostructure, including a HfN2 monolayer stacked over graphene, has been studied using density functional theory. The heterostructure shows the potential for high tunability in electrical contacts and doping carrier concentration under external perturbation such as strain and electric field control.
Graphene-based van der Waals heterostructure (vdWH) comprising of HfN2 monolayer stacked over graphene has been designed and studied based on density functional theory. The vdWH forms a n-type Schottky contact with a Schottky barrier height (SBH) of 0.67 eV, while it exhibits p-type SBH of 0.93 eV. The response of SBH and electrical contact properties to external perturbation, such as, vertical strain and electric field has been investigated thoroughly. Under the application of strain and normal electric field within range of +/- 0.3 V/angstrom, the type of electrical contacts, i.e., n/p type Schottky or Ohmic, is found to be interconvertible, while electron/hole doping in graphene is tunable by a doping carrier concentration of up to similar to 10(13) cm(-2), which lies between experimentally observed molecular doping (similar to 10(12) cm(-2)) and electrolytic gating (similar to 10(14) cm(-2)). Such an extremely high tunability in electrical contacts, doping carrier concentration along with its excellent optical response in the visible light region shows unrivalled potential of this vdWH in high performance graphene-based futuristic Schottky transistors with high on/off ratio, ultrathin phototransistor with high gain, low-power multivalued optical non volatile memory devices, and nanoelectronics.
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