相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Self-Powered Solar-Blind Photodetectors Based on α/β Phase Junction of Ga2O3
D. Y. Guo et al.
PHYSICAL REVIEW APPLIED (2020)
Recent progress on the electronic structure, defect, and doping properties of Ga2O3
Jiaye Zhang et al.
APL MATERIALS (2020)
Point defects in Ga2O3
Matthew D. McCluskey
JOURNAL OF APPLIED PHYSICS (2020)
Probing Charge Transport and Background Doping in Metal-Organic Chemical Vapor Deposition-Grown (010) β-Ga2O3
Zixuan Feng et al.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (2020)
β-Ga2O3 nanoflakes/p-Si heterojunction self-powered photodiodes
A. Atilgan et al.
MATERIALS TODAY COMMUNICATIONS (2020)
Nanocrystalline and Polycrystalline β-Ga2O3 Thin Films for Deep Ultraviolet Detectors
Maria Isabel Pintor-Monroy et al.
ACS APPLIED ELECTRONIC MATERIALS (2020)
Observation of impurity band conduction and variable range hopping in heavily doped (010) β-Ga2O3
Zumrad Kabilova et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2019)
MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature
Yuewei Zhang et al.
APL MATERIALS (2019)
MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties
Zixuan Feng et al.
APPLIED PHYSICS LETTERS (2019)
Si-doped β-(Al0.26Ga0.74)2O3 thin films and heterostructures grown by metalorganic vapor-phase epitaxy
Praneeth Ranga et al.
APPLIED PHYSICS EXPRESS (2019)
Defect phase diagram for doping of Ga2O3
Stephan Lany
APL MATERIALS (2018)
Donors and deep acceptors in beta-Ga2O3
Adam T. Neal et al.
APPLIED PHYSICS LETTERS (2018)
Incomplete Ionization of a 110 meV Unintentional Donor in β-Ga2O3 and its Effect on Power Devices
Adam T. Neal et al.
SCIENTIFIC REPORTS (2017)
β-Ga2O3 on insulator field-effect transistors with drain currents exceeding 1.5 A/mm and their self-heating effect
Hong Zhou et al.
APPLIED PHYSICS LETTERS (2017)
Intrinsic electron mobility limits in β-Ga2O3
Nan Ma et al.
APPLIED PHYSICS LETTERS (2016)
3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped β-Ga2O3 MOSFETs
Andrew J. Green et al.
IEEE ELECTRON DEVICE LETTERS (2016)
Conduction mechanism in highly doped β-Ga2O3((2)over-bar01) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes
Toshiyuki Oishi et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2016)
Electronic properties of the residual donor in unintentionally doped β-Ga2O3
N. T. Son et al.
JOURNAL OF APPLIED PHYSICS (2016)
Recent progress in Ga2O3 power devices
Masataka Higashiwaki et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2016)
High-mobility β-Ga2O3((2)over-bar01) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes with Ni contact
Toshiyuki Oishi et al.
APPLIED PHYSICS EXPRESS (2015)
Thermal expansion coefficients of β-Ga2O3 single crystals
Fabio Orlandi et al.
APPLIED PHYSICS EXPRESS (2015)
Growth temperature dependences of structural and electrical properties of Ga2O3 epitaxial films grown on β-Ga2O3 (010) substrates by molecular beam epitaxy
Kohei Sasaki et al.
JOURNAL OF CRYSTAL GROWTH (2014)
Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics
Masataka Higashiwaki et al.
APPLIED PHYSICS LETTERS (2013)
Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
Masataka Higashiwaki et al.
APPLIED PHYSICS LETTERS (2012)
Thickness-Independent Transport Channels in Topological Insulator Bi2Se3 Thin Films
Namrata Bansal et al.
PHYSICAL REVIEW LETTERS (2012)
Electrical properties of β-Ga2O3 single crystals grown by the Czochralski method
K. Irmscher et al.
JOURNAL OF APPLIED PHYSICS (2011)
Oxygen vacancies and donor impurities in β-Ga2O3
J. B. Varley et al.
APPLIED PHYSICS LETTERS (2010)
Electrical conductivity and carrier concentration control in β-Ga2O3 by Si doping
Encarnacion G. Villora et al.
APPLIED PHYSICS LETTERS (2008)