Impurity band conduction in Si-doped β-Ga2O3 films

By combining temperature-dependent resistivity and Hall effect measurements, we investigate donor state energy in Si-doped beta -Ga2O3 films grown using metal-organic vapor phase epitaxy. High-magnetic field (H) Hall effect measurements (-90kOe <= H <= +90kOe) showed non-linear Hall resistance for T<150K, revealing two-band conduction. Further analyses revealed carrier freeze out characteristics in both bands yielding donor state energies of 33.7 and similar to 45.6meV. The former is consistent with the donor energy of Si in beta -Ga2O3, whereas the latter suggests a residual donor state. This study provides critical insight into the impurity band conduction and the defect energy states in beta -Ga2O3 using high-field magnetotransport measurements.

Automated summary

By using high-field magnetotransport measurements, this study investigates donor state energy characteristics in Si-doped β-Ga2O3 films, revealing critical insights into impurity band conduction and defect energy levels in the material.