期刊
APPLIED PHYSICS LETTERS
卷 118, 期 7, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/5.0033930
关键词
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资金
- Academy of Finland [285809, 315082, 319178]
- Magnus Ehrnrooth Foundation
- Academy of Finland (AKA) [315082, 319178, 285809, 315082, 319178, 285809] Funding Source: Academy of Finland (AKA)
In this study, positron annihilation was used to investigate beta-Ga2O3, revealing that split Ga vacancies are the primary trapping sites for positrons in the material, with concentrations of at least 1 x 10^18 cm^-3, regardless of dopant type or conductivity.
We report a positron annihilation study using state-of-the-art experimental and theoretical methods in n-type and semi-insulating beta - Ga 2 O 3. We utilize the recently discovered unusually strong Doppler broadening signal anisotropy of beta - Ga 2 O 3 in orientation-dependent Doppler broadening measurements, complemented by temperature-dependent positron lifetime experiments and first principles calculations of positron-electron annihilation signals. We find that split Ga vacancies dominate the positron trapping in beta - Ga 2 O 3 single crystals irrespective of the type of dopant or conductivity, implying concentrations of at least 1 x 1 0 18 c m - 3.
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