Spin-orbit torque and Dzyaloshinskii-Moriya interaction in perpendicularly magnetized heterostructures with iridium

Spin-orbit torque and Dzyaloshinskii-Moriya interaction are systematically investigated in perpendicularly magnetized [Ni-Co](2)/Ir heterostructures. From the thickness study, the spin Hall angle theta (SH) and spin diffusion length l(sd) of Ir are determined to be theta (SH) approximate to 0.005 and l(sd) approximate to 1.2nm. Remarkably, it is found that by taking advantage of the low resistivity of Ir, the Ir-based device consumes less power for spin-orbit torque-driven magnetization switching compared to the one based on Pt or Ta. Furthermore, the Dzyaloshinskii-Moriya interaction field and coefficient D at the [Ni-Co](2)/Ir interface are determined to be 174Oe and 0.82 mJm(-2). This study suggests Ir as an advantageous material for ultralow-power and high-density spin-orbit torque memory and logic devices.

Automated summary

In the study of perpendicularly magnetized [Ni-Co](2)/Ir heterostructures, it is found that Ir's low resistivity allows for less power consumption in spin-orbit torque-driven magnetization switching compared to Pt or Ta-based devices. Additionally, the Dzyaloshinskii-Moriya interaction field and coefficient at the [Ni-Co](2)/Ir interface are determined, suggesting Ir as a beneficial material for ultralow-power and high-density spin-orbit torque memory and logic devices.