Exchange interactions in topological/antiferromagnetic heterostructures

Performing ab initio calculations, we investigate exchange interactions between the topological insulator and the antiferromagnetic films in detail. In this work, choosing the Bi2Te3/CrSb heterostructure as a typical model system, we prove that the magnitude of the magnetic anisotropy and the spin direction of heterostructures can be manipulated by tuning the interfacial exchange coupling with the stacking modes between the Bi2Te3 and the CrSb films. The exchange gap in various heterostructures ranges from 21.1meV in the type-C stacking to 36.2meV in the type-B stacking. We demonstrate that the magnetic anisotropy energy of the system originates from the hybridization between different atomic orbitals at the interface. Moreover, large induced magnetic moments were found at the interface.

Automated summary

In this study, ab initio calculations were used to investigate exchange interactions between topological insulators and antiferromagnetic films. The results show that the magnetic anisotropy and spin direction of heterostructures can be controlled by tuning the stacking modes, with large induced magnetic moments found at the interface.