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Jin Wang et al.
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Deep-ultraviolet light emission from 4H-AlN/4H-GaN short-period superlattice grown on 4H-SiC(11(2)over-bar0)
M. Kaneko et al.
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Defect-related anisotropic surface microstructures of nonpolar a-plane GaN epitaxial films
Xiaochan Li et al.
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Yi Zhang et al.
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S. A. Church et al.
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High responsivity and low dark current nonpolar GaN-based ultraviolet photo-detectors
Wenliang Wang et al.
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Fabrication of non-polar GaN based highly responsive and fast UV photodetector
Abhiram Gundimeda et al.
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Fast response ultraviolet photodetectors based on solution-processed ZnO nanocrystals
Zhang TongShuo et al.
SCIENCE CHINA-TECHNOLOGICAL SCIENCES (2015)
Enhanced UV detection by non-polar epitaxial GaN films
Shruti Mukundan et al.
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The effects of substrate nitridation on the growth of nonpolar α-plane GaN on r-plane sapphire by metalorganic chemical vapor deposition
Jun Zhang et al.
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Semipolar and nonpolar GaN epi-films grown on m-sapphire by plasma assisted molecular beam epitaxy
Shruti Mukundan et al.
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Structural anisotropic properties of a-plane GaN epilayers grown on r-plane sapphire by molecular beam epitaxy
A. Lotsari et al.
JOURNAL OF APPLIED PHYSICS (2014)
Charged basal stacking fault scattering in nitride semiconductors
Aniruddha Konar et al.
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Influence of threading dislocations on GaN-based metal-semiconductor-metal ultraviolet photodetectors
Dabing Li et al.
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Michelle A. Moram et al.
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Nanorod epitaxial lateral overgrowth of a-plane GaN with low dislocation density
Shih-Chun Ling et al.
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On the origin of threading dislocations in GaN films
M. A. Moram et al.
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Understanding x-ray diffraction of nonpolar gallium nitride films
M. A. Moram et al.
JOURNAL OF APPLIED PHYSICS (2009)
Characterization of defects in undoped non c-plane and high resistance GaN layers dominated by stacking faults
H. Witte et al.
PHYSICA B-CONDENSED MATTER (2009)
X-ray diffraction of III-nitrides
M. A. Moram et al.
REPORTS ON PROGRESS IN PHYSICS (2009)
Narrow-band photodetection based on M-plane GaN films
Sandip Ghosh et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2008)
Scanning Kelvin force microscopy imaging of surface potential variations near threading dislocations in GaN
JWP Hsu et al.
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Impact of the defects on the electrical and optical properties of AlGaN ultraviolet photodetectors
M Hanzaz et al.
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