相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Diamond power devices: state of the art, modelling, figures of merit and future perspective
N. Donato et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2020)
Sulfur regulation of boron doping and growth behavior for high-quality diamond in microwave plasma chemical vapor deposition
D. Y. Liu et al.
APPLIED PHYSICS LETTERS (2020)
Defect and Threading Dislocations in Single Crystal Diamond: A Focus on Boron and Nitrogen Codoping
Riadh Issaoui et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2019)
Dislocations imaging in low boron doped diamond epilayers using Field Emission Scanning Electron Microscopy (FE-SEM)
C. Barbay et al.
APPLIED SURFACE SCIENCE (2019)
Low Temperature Thermal Conductivity of Heavily Boron-Doped Synthetic Diamond: Influence of Boron-Related Structure Defects
D. Prikhodko et al.
JOURNAL OF SUPERHARD MATERIALS (2019)
Recent advances in diamond power semiconductor devices
Hitoshi Umezawa
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2018)
Boron-Doping Proximity Effects on Dislocation Generation during Non-Planar MPCVD Homoepitaxial Diamond Growth
Fernando Lloret et al.
NANOMATERIALS (2018)
Stratigraphy of a diamond epitaxial three-dimensional overgrowth using doping superlattices
F. Lloret et al.
APPLIED PHYSICS LETTERS (2016)
Reprint of Imaging of diamond defect sites by electron-beam-induced current
S. Kono et al.
DIAMOND AND RELATED MATERIALS (2016)
Influence of methane concentration on MPCVD overgrowth of 100-oriented etched diamond substrates
Fernando Lloret et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2016)
TEM study of defects versus growth orientations in heavily boron-doped diamond
F. Lloret et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2015)
Critical boron-doping levels for generation of dislocations in synthetic diamond
M. P. Alegre et al.
APPLIED PHYSICS LETTERS (2014)
Dislocation engineering in SiGe heteroepitaxial films on patterned Si (001) substrates
R. Gatti et al.
APPLIED PHYSICS LETTERS (2011)
X-ray topography studies of dislocations in single crystal CVD diamond
M. P. Gaukroger et al.
DIAMOND AND RELATED MATERIALS (2008)
Lattice parameters and thermal expansion of superconducting boron-doped diamonds
V. V. Brazhkin et al.
PHYSICAL REVIEW B (2006)
Relaxation study of AlGaAs cladding layers in InGaAs/GaAs (111)B lasers designed for 1.0-1.1 μm operation
M Gutiérrez et al.
MICROELECTRONICS JOURNAL (2002)
Strain relaxation behavior of InxGa1-xAs quantum wells on vicinal GaAs (111)B substrates
M Gutiérrez et al.
APPLIED PHYSICS LETTERS (2002)
分享论文
