Ultra-wide bandgap corundum-structured p-type α-(Ir,Ga)2O3 alloys for α-Ga2O3 electronics

Ultra-wide bandgap p-type alpha-(Ir,Ga)(2)O-3 films with bandgaps of up to 4.3eV have been obtained by unintentional doping or Mg doping. For Mg-doped films, Hall-effect measurements revealed a hole concentration of 9.9x10(18) to 8.1x10(19)cm(-3) and a mobility of 0.13-0.92cm(2)/Vs, respectively. A preliminary test of a pn junction diode composed of p-type alpha-(Ir,Ga)(2)O-3 and n-type alpha -Ga2O3 did not show catastrophic breakdown in the reverse direction until 100V and the current on/off ratio at +3V/-3V was 5x10(5). Since alpha-(Ir,Ga)(2)O-3 and alpha -Ga2O3 take the same crystal structure and are well lattice-matched (with a lattice mismatch of <0.3%), the formation of a high-quality pn heterojunction is encouraged; this is one of the advantages of the corundum material system.

Automated summary

Ultra-wide bandgap p-type alpha-(Ir,Ga)(2)O-3 films were achieved through unintentional or Mg doping, showing potential for high-quality pn heterojunction formation with n-type alpha-Ga2O3 due to their similar crystal structures and good lattice matching. Initial testing of a pn junction diode composed of these materials demonstrated promising performance.