Enabling large memory window and high reliability for FeFET memory by integrating AlON interfacial layer

A thin film of AlON with a nitrogen concentration of 13% was developed as the interfacial layer (IL) of HfZrOx-based ferroelectric field-effect transistor (FeFET) memory devices on a Si substrate. Compared to the conventional SiO2/SiON IL, due to a higher dielectric constant value that allows a smaller voltage drop across it and a larger valence band offset (Delta Ev) with respect to Si along with prominent passivation of Si dangling bonds that effectively suppress hole trapping, memory devices with the AlON IL demonstrate a large memory window (MW) of 3.12V by +/- 4V gate voltage sweeping, robust endurance after 10(5) cycles with a long pulse width of 10(-4) s, and a stable MW of 2.95V up to 10years, standing out from other HfZrOx-based FeFET memory reported in the literature. Furthermore, the AlON IL can be integrated with HfZrOx in the same atomic layer deposition step, which greatly simplifies the process. From the device performance and process integration points of view, the AlON IL unleashes the potential of FeFET memory by enabling high reliability with a large MW.

Automated summary

By utilizing AlON as the interfacial layer for HfZrOx-based FeFET memory devices, significant improvements in memory window, stability, and process simplification can be achieved, unravelling the potential for high reliability in FeFET memory devices.