Fermi level pinning and band bending in δ-doped BaSnO3

Various delta -doped semiconductor heterostructures have been effectively used for devices at room temperature and for quantum phenomena at low temperatures. Here, we use BaSnO3 and investigate its delta -doped system, focusing on its band bending and surface boundary conditions. We measured the two-dimensional carrier density (n(2D)) of the delta -doped BaSnO3 system of various thicknesses and doping levels. We also studied the effect of the BaSnO3 capping layer thickness on n(2D). We show that the delta -doped BaSnO3 system can be very well described by band bending with the aid of the Poisson-Schrodinger simulation. At the same time, the capping layer thickness dependence of n(2D) reveals how the boundary condition on the surface of La-doped BaSnO3 evolves as a function of its capping layer thickness.

Automated summary

Delta-doped BaSnO3 systems were studied in terms of band bending and surface boundary conditions, with measurements of 2D carrier density and investigation into the effect of capping layer thickness. The system was well described by band bending through Poisson-Schrodinger simulation, and the evolution of surface boundary conditions on La-doped BaSnO3 was revealed with changes in capping layer thickness.