期刊
APPLIED PHYSICS EXPRESS
卷 14, 期 4, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.35848/1882-0786/abec90
关键词
GaN; high-electron-mobility transistor (HEMT); free-standing AlN substrate; X-band; output power density
资金
- Innovative Science and Technology Initiative for Security, ATLA, Japan [JPJ004596]
This letter demonstrates the successful high-power RF operation of AlGaN/GaN HEMTs on AlN substrate at X-band, showcasing a high output power density. The results suggest the potential of GaN HEMTs on AlN substrate as next-generation high-power RF devices.
In this letter, we successfully achieved high-power radio frequency (RF) operation of AlGaN/GaN high electron mobility transistors (HEMTs) fabricated on free-standing AlN substrate at X-band. The developed HEMT on AlN substrate comprised a 200 nm thick GaN channel and AlGaN buffer with an Al composition of 30%. Thanks to high breakdown voltage of the HEMT on AlN substrate, we successfully demonstrated 15.2 W mm(-1) output power density at operating voltages of 70 V even without device technologies such as source-field plate and optimization of device dimension. Our results show that the potential of GaN HEMTs on AlN substrate as next-generation high-power RF devices.
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