期刊
ADVANCED MATERIALS
卷 33, 期 13, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.202007870
关键词
charge transport; disorder; field‐ effect transistors; organic semiconductors; phonons
类别
资金
- Natural Sciences and Engineering Research Council of Canada (NSERC)
- Fonds de Recherche du Quebec - Nature et Technologies (FRQNT)
- EC through the ERC project through the ERC project SUPRAFUNCTION [GA-257305]
- Marie Curie ITN project BORGES [813863]
- Marie Curie ITN project UHMob [GA-811284]
- Labex project CSC within the Investissement d'Avenir program [ANR-10-LABX-0026 CSC, ANR-10-IDEX-0002-02]
- Labex project NIE [ANR-10-IDEX-0002-02, ANR-11-LABX-0058 NIE]
- International Center for Frontier Research in Chemistry (icFRC)
- Engineering and Physical Sciences Research Council (EPSRC) [EP/P00928X/1]
- European Commission/Region Wallonne (FEDER - BIORGEL project)
- Consortium des Equipements de Calcul Intensif (CECI) - Fonds National de la Recherche Scientifique (F.R.S.-FNRS) [2.5020.11]
- Tier-1 supercomputer of the Federation Wallonie-Bruxelles
- Walloon Region [1117545]
- FRS-FNRS
- European Union Horizon 2020 research and innovation program [646176]
- EPSRC [EP/P00928X/1] Funding Source: UKRI
- Marie Curie Actions (MSCA) [813863] Funding Source: Marie Curie Actions (MSCA)
Charge transport in organic semiconductors is highly sensitive to disorder, especially in n-type materials, due to internal dynamic disorder caused by thermal fluctuations and molecular vibrations. This disorder can lead to transient localization of charge carriers.
Charge transport in organic semiconductors is notoriously extremely sensitive to the presence of disorder, both internal and external (i.e., related to interactions with the dielectric layer), especially for n-type materials. Internal dynamic disorder stems from large thermal fluctuations both in intermolecular transfer integrals and (molecular) site energies in weakly interacting van der Waals solids and sources transient localization of the charge carriers. The molecular vibrations that drive transient localization typically operate at low-frequency (
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