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Emerging Opportunities for 2D Semiconductor/Ferroelectric Transistor-Structure Devices

期刊

ADVANCED MATERIALS
卷 33, 期 12, 页码 -

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.202005620

关键词

2D semiconductors; ferroelectrics; nanodevices; nonvolatile memories; transistors

资金

  1. Royal Society
  2. EPSRC (UK) [EP/P031544/1, EP/P025803/1, EP/T027207/1]
  3. EPSRC [EP/P031544/1, EP/T027207/1, EP/P025803/1] Funding Source: UKRI

向作者/读者索取更多资源

Semiconductor technology is rapidly evolving, with potential for revolutionary innovations at the material and working principle level. The combination of 2D semiconductors and functional ferroelectrics offers new working principles and enhanced device performance, with the possibility of applications beyond traditional silicon systems. Recent demonstrations of novel device concepts based on 2D semiconductor/ferroelectric heterostructures are critically reviewed, highlighting their potential for driving exciting innovations in modern electronics.
Semiconductor technology, which is rapidly evolving, is poised to enter a new era for which revolutionary innovations are needed to address fundamental limitations on material and working principle level. 2D semiconductors inherently holding novel properties at the atomic limit show great promise to tackle challenges imposed by traditional bulk semiconductor materials. Synergistic combination of 2D semiconductors with functional ferroelectrics further offers new working principles, and is expected to deliver massively enhanced device performance for existing complementary metal-oxide-semiconductor (CMOS) technologies and add unprecedented applications for next-generation electronics. Herein, recent demonstrations of novel device concepts based on 2D semiconductor/ferroelectric heterostructures are critically reviewed covering their working mechanisms, device construction, applications, and challenges. In particular, emerging opportunities of CMOS-process-compatible 2D semiconductor/ferroelectric transistor structure devices for the development of a rich variety of applications are discussed, including beyond-Boltzmann transistors, nonvolatile memories, neuromorphic devices, and reconfigurable nanodevices such as p-n homojunctions and self-powered photodetectors. It is concluded that 2D semiconductor/ferroelectric heterostructures, as an emergent heterogeneous platform, could drive many more exciting innovations for modern electronics, beyond the capability of ubiquitous silicon systems.

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