4.8 Article

A Simple Cu(II) Polyelectrolyte as a Method to Increase the Work Function of Electrodes and Form Effective p-Type Contacts in Perovskite Solar Cells

期刊

ADVANCED FUNCTIONAL MATERIALS
卷 31, 期 26, 页码 -

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.202009246

关键词

charge carrier recombination; hole transport materials; perovskite solar cells; p‐ type doping

资金

  1. National Research Foundation of Korea [NRF-2017R1A2B2012971, 2019K1A3A7A09101449, NRF-2020R1F1A1075539]
  2. National Research Foundation of Korea [2019K1A3A7A09101449] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

A novel hole transport layer Cu:PSS was investigated in this study for perovskite solar cells, showing comparable device parameters to PEDOT:PSS and greatly improved performance when mixed with PEDOT:PSS. Optimized devices incorporating Cu:PSS/PEDOT:PSS mixtures achieved efficiency improvement from 14.35% to 19.44%, one of the highest reported values for this type of device. This type of HTL is expected to be applicable for creating p-type contacts and enhancing performance in other types of semiconductor devices.
One effective strategy to improve the performance of perovskite solar cells (PSCs) is to develop new hole transport layers (HTLs). In this work, a simple polyelectrolyte HTL, copper (II) poly(styrene sulfonate) (Cu:PSS), which comprises easily reduced Cu2+ counter-ions with an anionic PSS polyelectrolyte backbone is investigated. Photoelectron spectroscopy reveals an increase in the work function of the anode and upward band bending effect upon incorporation of Cu:PSS in PSC devices. Cu:PSS shows a synergistic effect when mixed with polyethylenedioxythiophene: polystyrenesulfonate (PEDOT:PSS) in various proportions and results in a decrease in the acidity of PEDOT:PSS as well as reduced hysteresis in completed devices. Cu:PSS functions effectively as a HTL in PSCs, with device parameters comparable to PEDOT:PSS, while mixtures of Cu:PSS with PEDOT:PSS shows greatly improved performance compared to PEDOT:PSS alone. Optimized devices incorporating Cu:PSS/PEDOT:PSS mixtures show an improvement in efficiency from 14.35 to 19.44% using a simple CH3NH3PbI3 active layer in an inverted (P-I-N) geometry, which is one of the highest values yet reported for this type of device. It is expected that this type of HTL can be employed to create p-type contacts and improve performance in other types of semiconducting devices as well.

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