4.8 Article

Dual Additive for Simultaneous Improvement of Photovoltaic Performance and Stability of Perovskite Solar Cell

期刊

ADVANCED FUNCTIONAL MATERIALS
卷 31, 期 20, 页码 -

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.202100396

关键词

charge recombination; defect passivation; dual additive; perovskite solar cells; trap density

资金

  1. National Research Foundation of Korea (NRF) - Ministry of Science and ICT (MSIT) of Korea [NRF-2012M3A6A7054861, NRF-2016M3D1A1027663, NRF-2016M3D1A1027664]
  2. Energy Technology Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) - Ministry of Trade, Industry Energy [20193091010310]
  3. Defense Challengeable Future Program of the Agency for Defense Development

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Additive engineering is an efficient approach for improving photovoltaic performance and phase stability of formamidinium-based perovskite, with a dual additive strategy of mixing MACl and CsCl proving successful in enhancing open-circuit voltage Voc, reducing trap density, and increasing resistance against charge recombination. The best power conversion efficiency achieved with the dual additive is 23.22%, outperforming single additive strategies using MACl or CsCl.
Additive engineering is one of the most efficient approaches to improve not only photovoltaic performance but also phase stability of formamidinium (FA)-based perovskite. Chlorine-based additives, such as methylammonium chloride (MACl), have been in general used to improve phase stability of FAPbI(3), which however often leads to loss of open-circuit voltage V-oc, accompanied by instability of the perovskite phase due to the volatile nature of the MA cation. A dual additive strategy for improving V-oc and thereby the overall efficiency are reported here. The mixing ratio of MACl to CsCl is varied from [MACl]/[CsCl] = 4 to 1, where V-oc increases with decreasing the ratio and best performance is achieved from [MACl]/[CsCl] = 2. As compared to the single source of MACl, the addition of CsCl reduces trap density and increases resistance against charge recombination, which is responsible for the increased V-oc. Moreover, defect passivation achieved by dual additive enables better stability than the single additive MACl as confirmed by long-term stability tests with unencapsulated devices for 50 days under relative humidity of about 40% at room temperature. The best power conversion efficiency of 23.22% is achieved by dual additive, which is higher than that for single additive of MACl or CsCl.

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