4.7 Article

Dependence of characteristics of Hf(M)SiBCN (M = Y, Ho, Ta, Mo) thin films on the M choice: Ab-initio and experimental study

期刊

ACTA MATERIALIA
卷 206, 期 -, 页码 -

出版社

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.actamat.2021.116628

关键词

Metal nitrides; Ab-initio calculations; Magnetron sputtering; Formation energy; Optical properties; Electrical properties

资金

  1. Grant Agency of the Czech Republic [19-14011S]
  2. national grid infrastructure Metacentrum through project e-Infrastruktura CZ within the program Projects of Large Research, Development and Innovations Infrastructures [e-INFRA LM2018140]

向作者/读者索取更多资源

The study investigates amorphous HfMSiBCN materials through ab initio calculations and magnetron sputtering, aiming to combine high-temperature stability and oxidation resistance with optimized mechanical, optical, and electrical properties. The results show that the properties of HfMSiBCN materials are influenced by the choice and fraction of M, with advantages in high electrical conductivity and hardness for potential applications in high-temperature coating design.
Amorphous HfMSiBCN materials (M = Y, Ho, Ta, Mo or an enhanced Hf content instead of any other M) are investigated by ab initio calculations and magnetron sputtering. We focus on combining the high-temperature stability and oxidation resistance of these materials with optimised mechanical, optical and electrical properties. First, we predict the corresponding trends by calculating the effect of the M choice and fraction on formation energy (E-form) and mechanical properties of MN and HfxM1-xN crystals. We discuss the dependence of E-form(HfxM1-xN) on the crystal structure and the distribution of Hf and M in the metal sublattice. The mechanical properties calculated for MN correlate with those measured for HfMSiBCN. The driving force towards N incorporation, decreasing with the periodic-table group number of M according to the calculated E-form (MN), correlates with the measured increasing electrical conductivity and extinction coefficient of HfMSiBCN. Second, we model the amorphous HfMSiBCN materials themselves by ab initio molecular dynamics. The calculated band gap, localisation of electronic states and bonding preferences of M also correspond to the increasing metallicity with respect to the periodic-table group number of M and confirm the possibility of predicting the trends in characteristics of HfMSiBCN using those of MN. Third, we study the measured HfMSiBCN properties as functions of each other and identify sputter target compositions leading to hard films with high electrical conductivity at a relatively low extinction coefficient. The results are important for the design of hard, conductive and/or transparent high-temperature coatings. (C) 2021 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

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