期刊
ACS APPLIED MATERIALS & INTERFACES
卷 13, 期 10, 页码 12211-12220出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.1c00096
关键词
heterojunction annealing; elemental diffusion; electronic properties; interface barrier; kesterite solar cells
资金
- National Key R&D Program of China [2019YFB1503500, 2018YFE0203400]
- National Natural Science Foundation of China [U1902218, 11774187]
This study reveals the impact of high-temperature postdeposition annealing on the p-n heterojunction, which affects the performance of the solar cell. After high-temperature postdeposition annealing, the surface potential of the absorber layer inverts, the number of deep-level defects increases, and the CdS/CZTSe interface barrier height increases.
Heterojunction annealing is widely used to improve the efficiency of kesterite thin-film solar cells. However, the efficiency will decrease when the annealing temperature is high, and the reason why high-temperature postdeposition annealing results in the deterioration of device performance is not well-studied, which restricts the efficiency promotion of kesterite solar cells. This study investigates the effect of high-temperature postdeposition annealing on the p-n heterojunction and, thus, on the performance of the solar cell. The surface potential of the absorber layer inverts, the number of deep-level defects increases, and the CdS/CZTSe interface barrier height increases after high-temperature postdeposition annealing. A combination of different characterization methods reveals that excessive elemental diffusion at the p-n heterojunction during high-temperature postdeposition annealing is the key reason for deterioration of the performance of CZTSe devices. This study discloses the mechanism for the change in device properties with high-temperature postdeposition annealing and will also be helpful for understanding the mechanism of efficiency change as the solar cell keeps working.
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