期刊
ACS APPLIED MATERIALS & INTERFACES
卷 13, 期 5, 页码 6470-6479出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.0c22210
关键词
polymer; organic electronics; diode; charge transport; radiation; detector; poly(3-hexylthiophene); P3HT; PCBM; alpha particle
资金
- China Scholarship Council
- Science and Technology Facilities Council [ST/N000420/1, ST/S00095X/1, ST/T002212/1, ST/V000039/1]
- AWE Plc. [30406548, 30469473]
- U.K. Ministry of Defence Crown Owned Copyright [2020/AWE]
- STFC [ST/T002212/1, ST/M001512/1, ST/K001248/1, ST/N000420/1, ST/V000039/1, ST/S00095X/1] Funding Source: UKRI
Organic semiconductor diodes fabricated using a blend of poly(3-hexylthiophene) and phenyl-C-61-butyric acid methyl ester achieved consistent 4 MeV alpha particle detection. The devices showed reproducible, reversible, and repeatable alpha particle detection with low-voltage operation, reaching high confidence levels with signal-to-noise ratios exceeding 20. Optimization of device dimensions and drive conditions resulted in increased gain-efficiency products, demonstrating the viability of solution-processed organic semiconductor diodes for low-voltage alpha particle detection.
Diodes fabricated using a blend of poly(3-hexylthiophene) and phenyl-C-61-butyric acid methyl ester (6-80 mu m thick) as an organic semiconductor component achieved consistent 4 MeV alpha particle detection. Current-voltage characteristics and current- time measurements were obtained under alpha irradiation and in its absence. Steady-state and transient (time-of-flight) photoconduction measurements were additionally performed. Low-bias (<20 V) alpha particle detection gain-efficiency products of order 10(-2) were measured. The alpha particle detection was achieved reproducibly, reversibly, and repeatably in different devices of varying organic semiconductor layer thicknesses using both the steady-state and time-dependent (dynamic) diode responses. Conductive gain, due to trapped electrons, increased the alpha particle gain-efficiency product in both forward and reverse bias conditions as well as increasing steady-state photoconduction. The device thickness was optimized to maximize the gain-efficiency product by matching the penetration depth of the alpha particle, obtained by modeling, to the organic semiconductor layer thickness. Very high confidence alpha particle detection was achieved (with signal-to-noise ratios exceeding 20) under optimized device dimensions and drive conditions. Hecht function fitting of the gain-efficiency product versus electric field data returns mobility-lifetime products of order 10(-6) -10(-7) cm(2 )V(-1). This work demonstrates that solution-processed organic semiconductor diodes are viable for low-voltage alpha particle detection.
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