A Sensitive Visible Light Photodetector Using Cobalt-Doped Zinc Ferrite Oxide Thin Films

In this study, a highly sensitive trilayer photodetector using Co-doped ZnFe2O4 thin films annealed at 400 degrees C was synthesized successfully. Trilayer-photodetector devices with a film stack of 5 at % Co-doped-zinc-ferritethin-film/indium-tin-oxide on p(+)-Si substrates were fabricated by radio-frequency sputtering. The absorbance spectra, photoluminescence spectra, transmission electron microscopy images, and I-V characteristics under various conditions were comprehensively investigated. The outstanding performance of trilayer-photodector devices was measured, including a high photosensitivity of 181 and a fast photoresponse time with a rise time of 10.6 ms and fall time of 9.9 ms under 630 nm illumination. Therefore, the Co-doped ZnFe2O4 thin film is favorable for potential photodetector applications in visible light regions.

Automated summary

A highly sensitive trilayer photodetector using Co-doped ZnFe2O4 thin films was successfully synthesized in this study. The devices exhibited outstanding performance with high photosensitivity and fast photoresponse time, making them potentially suitable for photodetector applications in visible light regions.