4.8 Article

Charge Trapping in a Low-Crystalline High-Mobility Conjugated Polymer and Its Effects on the Operational Stability of Organic Field-Effect Transistors

期刊

ACS APPLIED MATERIALS & INTERFACES
卷 13, 期 14, 页码 16722-16731

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsami.0c20965

关键词

charge traps; conjugated polymers; organic field-effect transistors; bias stability; photo-excited charge collection spectroscopy

资金

  1. Center for Advanced Soft Electronics under the Global Frontier Research Program of the Ministry of Science and ICT, Korea [2011-0031628]
  2. National Research Foundation of Korea (NRF) - Ministry of Science and ICT, Korea [2020R1A2C3004477, 2020R1C1C100700111]
  3. National Research Foundation of Korea [2020R1A2C3004477] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

The study found that low-crystalline conjugated polymers can provide high charge carrier mobility, but their high degree of structural disorder leads to poor intrinsic operational stability, making them unsuitable for practical OFETs.
The effects of the microstructure of conjugated polymer thin films on charge trapping and operational stability of organic field-effect transistors (OFETs) are investigated. Device characteristics of OFETs based on two model conjugated polymers, poly(3-hexylthiophene) (P3HT) and a random 3-hexylthiophene-thiophene copolymer (RP33), are compared. P3HT films have high crystallinity and long-range molecular order, whereas RP33 films have low crystallinity and short-range molecular order as well as enhanced polymer backbone planarity. Experimental evidence shows that although the microstructure of the RP33 film provides efficient charge transport pathways, its high degree of structural disorder causes severe shallow trapping of charge carriers, which results in its inferior stability under bias stress. This study demonstrates that low-crystalline conjugated polymers with short-range order can provide a high charge-carrier mobility but at the same time be inappropriate for practical OFETs because of their poor intrinsic operational stability.

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