期刊
ACS APPLIED MATERIALS & INTERFACES
卷 13, 期 11, 页码 13744-13750出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.0c19266
关键词
2D materials; spintronics; Rashba effect; spin-orbit torques; transition metal dichalcogenides; 2D magnetic heterostructures
资金
- Semiconductor Research Corporation (SRC) NEWLIMITS Center [2819.007]
- NIST [70NANB17H041]
- Intel through the SRC [2746.001]
- Penn State 2D Crystal Consortium (2DCC)-Materials Innovation Platform (2DCC-MIP) under the NSF [DMR1539916]
Enhanced spin transfer torques from Rashba spin current can be achieved by inserting WSe2 in heterostructures of ferromagnets and transition metal dichalcogenides, without altering the interface polarization.
Rashba spin current generation emerges in heterostructures of ferromagnets and transition metal dichalcogenides (TMDs) due to an interface polarization and associated inversion symmetry breaking. Recent work exploring the synthesis and transfer of epitaxial films on the top of low layer count 2D materials reveals that atomic potentials from the underlying substrate interface are not completely screened. The extension of this transparency effect to other interfacial phenomena, such as the Rashba effect and associated spin torques, has not yet been demonstrated. Here, we report enhanced spin transfer torques from the Rashba spin current in heterostructures of permalloy (Py) and WSe2. We show that insertion of up to two monolayers of WSe2 enhances the spin transfer torques in a Rashba system by up to 3x, without changing the fieldlike Rashba spin-orbit torque (SOT), a measure of interface polarization. Our results indicate that low layer count TMD films can be used as an interfacial scattering promoter in heterostructure interfaces without quenching the original polarization.
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