4.8 Article

Tailoring the chemical bonding of GeTe-based alloys by MgB2 alloying to simultaneously enhance their mechanical and thermoelectric performance

期刊

MATERIALS TODAY PHYSICS
卷 16, 期 -, 页码 -

出版社

ELSEVIER
DOI: 10.1016/j.mtphys.2020.100308

关键词

GeTe; Thermoelectric; MgB2 alloying; Metavalent bonding; Thermal expansion

资金

  1. National Natural Science Foundation of China [21805196]
  2. Natural Science Foundation of Guangdong Province, China [2018A030310416]
  3. Foundation for Distinguished Young Talents in Higher Education of Guangdong, China [2017KQNCX178]
  4. Shenzhen Science and Technology Research Grant [JCYJ20180305124020928, JCYJ20170818093417096]
  5. Shenzhen Clean Energy Research Institute
  6. Natural Science Foundation of Shenzhen University

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In this study, a MgB2 alloying strategy was employed to enhance the mechanical and thermoelectric performance of GeTe-based alloys, while eliminating negative coefficient of thermal expansion (CTE) and enhancing compressive strength and hardness. The Mg-substitution induced delocalization of electrons and modulation of band structures were found to facilitate the transport of charge carriers, leading to improved ZT values of the samples.
As a promising mid-temperature thermoelectric material, GeTe-based alloys have been intensively studied recently. Besides high figure of merit (ZT), good service stability is also significant for the practical applications of thermoelectric materials, which is especially a challenge for GeTe-based alloys having phase-transition behaviors. In this work, we have demonstrated a MgB2-alloying strategy to simultaneously enhance the mechanical and thermoelectric performance of GeTe-based alloys, owing to the tuning of chemical bonding. The negative coefficient of thermal expansion (CTE) of GeTe near the phase-transition temperature can be fully eliminated through co-alloying of Sb and MgB2. The enhancement of compressive strength and hardness by MgB2 alloying can be mainly ascribed to the solid-solution effect and the tuning of grain structures. Moreover, the Mg-substitution induced delocalization of electrons and modulation of band structures can facilitate the transport of charge carriers. Combining these MgB2-alloying effects, we can obtain (Ge0.9Sb0.1Te)(1-x)(MgB2)(x) samples with a peak ZT of 1.92 at 773 K and average ZT of 1.1 within 300-773 K, smooth CTE in the whole working temperatures, high compressive strength of similar to 271 MPa and Vickers hardness of similar to 236 H-v. The chemical-bonding mechanism developed in this work should also be potential for enhancing the overall performance of other thermoelectric materials. (C) 2020 Elsevier Ltd. All rights reserved.

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