4.8 Article

A CMOS-integrated compute-in-memory macro based on resistive random-access memory for AI edge devices

相关参考文献

注意:仅列出部分参考文献,下载原文获取全部文献信息。
Proceedings Paper Engineering, Electrical & Electronic

15.2 A 28nm 64Kb Inference-Training Two-Way Transpose Multibit 6T SRAM Compute-in-Memory Macro for AI Edge Chips

Jian-Wei Su et al.

2020 IEEE INTERNATIONAL SOLID- STATE CIRCUITS CONFERENCE (ISSCC) (2020)

Proceedings Paper Engineering, Electrical & Electronic

15.4 A 22nm 2Mb ReRAM Compute-in-Memory Macro with 121-28TOPS/W for Multibit MAC Computing for Tiny AI Edge Devices

Cheng-Xin Xue et al.

2020 IEEE INTERNATIONAL SOLID- STATE CIRCUITS CONFERENCE (ISSCC) (2020)

Article Engineering, Electrical & Electronic

Xcel-RAM: Accelerating Binary Neural Networks in High-Throughput SRAM Compute Arrays

Amogh Agrawal et al.

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS (2019)

Proceedings Paper Engineering, Electrical & Electronic

Considerations of Integrating Computing-In-Memory and Processing-In-Sensor into Convolutional Neural Network Accelerators for Low-Power Edge Devices

Kea-Tiong Tang et al.

2019 SYMPOSIUM ON VLSI CIRCUITS (2019)

Proceedings Paper Computer Science, Hardware & Architecture

A 40nm 2Mb ReRAM Macro with 85% Reduction in FORMING Time and 99% Reduction in Page-Write Time Using Auto-FORMING and Auto-Write Schemes

Yen-Cheng Chiu et al.

2019 SYMPOSIUM ON VLSI TECHNOLOGY (2019)

Article Engineering, Electrical & Electronic

CMOS-integrated memristive non-volatile computing-in-memory for AI edge processors

Wei-Hao Chen et al.

NATURE ELECTRONICS (2019)

Article Engineering, Electrical & Electronic

A Multi-Functional In-Memory Inference Processor Using a Standard 6T SRAM Array

Mingu Kang et al.

IEEE JOURNAL OF SOLID-STATE CIRCUITS (2018)

Article Engineering, Electrical & Electronic

A 19.4-nJ/Decision, 364-K Decisions/s, In-Memory Random Forest Multi-Class Inference Accelerator

Mingu Kang et al.

IEEE JOURNAL OF SOLID-STATE CIRCUITS (2018)

Article Engineering, Electrical & Electronic

X-SRAM: Enabling In-Memory Boolean Computations in CMOS Static Random Access Memories

Amogh Agrawal et al.

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS (2018)

Article Multidisciplinary Sciences

Equivalent-accuracy accelerated neural-network training using analogue memory

Stefano Ambrogio et al.

NATURE (2018)

Article Engineering, Electrical & Electronic

A Variation-Tolerant In-Memory Machine Learning Classifier via On-Chip Training

Sujan K. Gonugondla et al.

IEEE JOURNAL OF SOLID-STATE CIRCUITS (2018)

Article Engineering, Electrical & Electronic

Fully memristive neural networks for pattern classification with unsupervised learning

Zhongrui Wang et al.

NATURE ELECTRONICS (2018)

Review Engineering, Electrical & Electronic

In-memory computing with resistive switching devices

Daniele Ielmini et al.

NATURE ELECTRONICS (2018)

Review Engineering, Electrical & Electronic

The future of electronics based on memristive systems

Mohammed A. Zidan et al.

NATURE ELECTRONICS (2018)

Article Engineering, Electrical & Electronic

Analogue signal and image processing with large memristor crossbars

Can Li et al.

NATURE ELECTRONICS (2018)

Article Engineering, Electrical & Electronic

In-Memory Computation of a Machine-Learning Classifier in a Standard 6T SRAM Array

Jintao Zhang et al.

IEEE JOURNAL OF SOLID-STATE CIRCUITS (2017)

Article Nanoscience & Nanotechnology

Sparse coding with memristor networks

Patrick M. Sheridan et al.

NATURE NANOTECHNOLOGY (2017)

Article Multidisciplinary Sciences

Face classification using electronic synapses

Peng Yao et al.

NATURE COMMUNICATIONS (2017)

Article Engineering, Electrical & Electronic

A 28 nm Configurable Memory (TCAM/BCAM/SRAM) Using Push-Rule 6T Bit Cell Enabling Logic-in-Memory

Supreet Jeloka et al.

IEEE JOURNAL OF SOLID-STATE CIRCUITS (2016)

Article Nanoscience & Nanotechnology

Memory leads the way to better computing

H. -S. Philip Wong et al.

NATURE NANOTECHNOLOGY (2015)

Review Nanoscience & Nanotechnology

Memristive devices for computing

J. Joshua Yang et al.

NATURE NANOTECHNOLOGY (2013)

Article Engineering, Electrical & Electronic

Three-Dimensional 4F2 ReRAM With Vertical BJT Driver by CMOS Logic Compatible Process

Ching-Hua Wang et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2011)

Article Multidisciplinary Sciences

'Memristive' switches enable 'stateful' logic operations via material implication

Julien Borghetti et al.

NATURE (2010)