期刊
JOURNAL OF ASIAN CERAMIC SOCIETIES
卷 9, 期 1, 页码 230-238出版社
TAYLOR & FRANCIS LTD
DOI: 10.1080/21870764.2020.1863575
关键词
Sol-gel; Mg1-xZnxNb2O6; dielectric properties
资金
- Ministry of Science and Technology of Taiwan [MOST 109-2221-E-006-139]
The study investigated the effects of zinc substitution on the electrical properties of sol-gel derived MgNb2O6 thin films, revealing that optimal performance was achieved at x = 0.2 and the electrical properties were tunable based on zinc content. Zinc content also influenced the leakage conduction mechanisms and critical electric field strength of the devices.
The effects of zinc substitution on the electrical properties of sol-gel derived MgNb2O6 (Mg1-xZnxNb2O6; MZ(x)NO) thin films were investigated. Accordingly, the experimental results revealed that the optimal optical and electrical properties of the devices can be obtained for specimen with x = 0.2. The dielectric constant, average transparency and optical band gap of the devices at 400 degrees C annealing are 21.2 (@1 MHz), similar to 80% and 4.86 eV, respectively. The results indicated that the electrical properties of the sol-gel derived MgNb2O6 thin films are tuneable based upon the variation of zinc content. More importantly, the fabrication temperature of the MZ(0.2)NO thin films is 100 degrees C lower than the bending point of the glass substrate making it suitable for practical applications. With the increase of the applied electric field, the leakage conduction mechanisms of the Al/MZ(x)NO/ITO devices are mainly controlled first by ohmic conduction at low electric field, changes to space-charge-limited conduction (SCLC) and then FN tunneling at high electric field. Moreover, the critical electric field strength of the conduction mechanisms is also a function of the zinc content.
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