4.6 Article

A Comparative Analysis between Standard and mm-Wave Optimized BEOL in a Nanoscale CMOS Technology

期刊

ELECTRONICS
卷 9, 期 12, 页码 -

出版社

MDPI
DOI: 10.3390/electronics9122124

关键词

back-end-of-line (BEOL); CMOS technology; conversion gain; down-converter; electromagnetic simulations; integrated transformers; noise figure; quality factor; radar self-resonance frequency

资金

  1. University of Catania through the Project Programma Ricerca di Ateneo UNICT

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This paper presents an extensive comparison of two 28-nm CMOS technologies, i.e., standard and mm-wave-optimized (i.e., thick metals and intermetal oxides) back-end-of-line (BEOL). The proposed comparison is carried out at both component and circuit level by means of a quantitative analysis of the actual performance improvements due to the adoption of a mm-wave-optimized BEOL. To this end, stand-alone transformer performance is first evaluated and then a complete mm-wave macroblock is investigated. A 77-GHz down-converter for frequency modulated continuous wave (FMCW) long-range/medium range (LR/MR) radar applications is exploited as a testbench. For the first time, it is demonstrated that thicker metals and intermetal oxides do not guarantee significant improvements at mm-wave frequencies and a standard (low-cost) BEOL is competitive in comparison with more complex (expensive) ones.

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