期刊
ELECTRONICS
卷 9, 期 12, 页码 -出版社
MDPI
DOI: 10.3390/electronics9122124
关键词
back-end-of-line (BEOL); CMOS technology; conversion gain; down-converter; electromagnetic simulations; integrated transformers; noise figure; quality factor; radar self-resonance frequency
资金
- University of Catania through the Project Programma Ricerca di Ateneo UNICT
This paper presents an extensive comparison of two 28-nm CMOS technologies, i.e., standard and mm-wave-optimized (i.e., thick metals and intermetal oxides) back-end-of-line (BEOL). The proposed comparison is carried out at both component and circuit level by means of a quantitative analysis of the actual performance improvements due to the adoption of a mm-wave-optimized BEOL. To this end, stand-alone transformer performance is first evaluated and then a complete mm-wave macroblock is investigated. A 77-GHz down-converter for frequency modulated continuous wave (FMCW) long-range/medium range (LR/MR) radar applications is exploited as a testbench. For the first time, it is demonstrated that thicker metals and intermetal oxides do not guarantee significant improvements at mm-wave frequencies and a standard (low-cost) BEOL is competitive in comparison with more complex (expensive) ones.
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