4.6 Article

Phase Transformation and Superstructure Formation in (Ti0.5, Mg0.5)N Thin Films through High-Temperature Annealing

期刊

COATINGS
卷 11, 期 1, 页码 -

出版社

MDPI
DOI: 10.3390/coatings11010089

关键词

sputtering; thermoelectrics; titanium nitride; magnesium nitride; ternary nitride

资金

  1. Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [2009 00971]
  2. Knut and Alice Wallenberg foundation [KAW-2020.0196, KAW-2018.0194]
  3. Swedish Research Council (VR) [2016-03365, 2019-05403]
  4. Swedish Foundation for Strategic Research [FFL 15-0290]
  5. Swedish Research Council [2018-05973]

向作者/读者索取更多资源

(Ti-0.5, Mg-0.5)N thin films were synthesized by reactive dc magnetron sputtering, exhibiting a rock-salt cubic structure and a LiTiO2-type superstructure. The films have an electrical resistivity of 150 mΩ*cm and a Seebeck coefficient of -25 μV/K. High temperature annealing in a nitrogen atmosphere leads to the formation of the cubic superstructure. Density functional theory calculations show a 0.07 eV direct bandgap for the LiTiO2-type TiMgN2 structure.
(Ti-0.5, Mg-0.5)N thin films were synthesized by reactive dc magnetron sputtering from elemental targets onto c-cut sapphire substrates. Characterization by theta-2 theta X-ray diffraction and pole figure measurements shows a rock-salt cubic structure with (111)-oriented growth and a twin-domain structure. The films exhibit an electrical resistivity of 150 m omega center dot cm, as measured by four-point-probe, and a Seebeck coefficient of -25 mu V/K. It is shown that high temperature (similar to 800 degrees C) annealing in a nitrogen atmosphere leads to the formation of a cubic LiTiO2-type superstructure as seen by high-resolution scanning transmission electron microscopy. The corresponding phase formation is possibly influenced by oxygen contamination present in the as-deposited films resulting in a cubic superstructure. Density functional theory calculations utilizing the generalized gradient approximation (GGA) functionals show that the LiTiO2-type TiMgN2 structure has a 0.07 eV direct bandgap.

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