期刊
JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T
卷 10, 期 -, 页码 687-696出版社
ELSEVIER
DOI: 10.1016/j.jmrt.2020.12.052
关键词
Halide perovskite; Pressure effect; Semiconductor; Electronic properties; Optical properties
资金
- East China University of Technology, Nanchang, Jiangxi Province
- Research Centre of Female Scientific and Medical College, Deanship of Scientific Research, Kind Saud University
This article investigates the variations of structural, electronic, thermal, and optical properties of halide perovskite CsYbBr3 under increasing pressure using density functional theory. The study shows significant changes in the lattice, electronic, and optical properties with pressure, indicating the suitability of CsYbBr3 for pressure-tunable opto-electronic devices.
This article presents the variation of structural, electronic, thermal and optical properties of a halide perovskite CsYbBr3 with increasing pressure, employing density functional theory. The pressure effect was determined in range of 0-15 GPa. In which stability of CsYbBr3 remains valid, as, verified from negative values of enthalpy of formation and phonon dispersion curves. A significant change was observed in lattice constant, bond lengths, bulk modulus and its pressure derivative, volume and ground state energy, with increasing pressure. The calculated electronic properties presented CsYbBr3 as a semiconductor with direct band gap of 3.61 eV. However, pressure rise shift the Yb-d states toward the Fermi level and causes a decrease in band gap. At 12 GPa, CsYbBr3 presents the semi metallic nature while further increase in pressure makes it as metallic. Moreover, Debye temperature (Gruneisen parameter) was observed to increase (decrease) with pressure rise while the lattice thermal conductivity was found to increase. The calculated optical properties exposed the suitability of CsYbBr3 in pressure tunable opto-electronic devices. (C) 2020 Published by Elsevier B.V.
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