In situ growth of large-area and self-aligned graphene nanoribbon arrays on liquid metal

Intrinsic graphene features semi-metallic characteristics that limit its applications in electronic devices, whereas graphene nanoribbons (GNRs) are promising semiconductors because of their bandgap-opening feature. However, the controllable mass-fabrication of high-quality GNR arrays remains a major challenge. In particular, the in situ growth of GNR arrays through template-free chemical vapor deposition (CVD) has not been realized. Herein, we report a template-free CVD strategy to grow large-area, high-quality and self-aligned GNR arrays on liquid copper surface. The width of as-grown GNR could be optimized to sub-10 nm with aspect ratio up to 387, which is higher than those of reported CVD-GNRs. The study of the growth mechanism indicates that a unique comb-like etching-regulated growth process caused by a trace hydrogen flow guides the formation of the mass-produced self-aligned GNR arrays. Our approach is operationally simple and efficient, offering an assurance for the use of GNR arrays in integrated circuits.

Automated summary

Intrinsic graphene is limited in electronic applications due to its semi-metallic characteristics, while graphene nanoribbons (GNRs) are considered promising semiconductors with bandgap-opening features. This study reports a template-free CVD strategy for growing large-area, high-quality, self-aligned GNR arrays on liquid copper, offering operational simplicity and efficiency for potential use in integrated circuits.