Enhanced resistive switching performance in bilayer Pt/TiO2/Co3O4/Pt memory device

In this work, the bilayer Pt/TiO2/Co3O4/Pt and single-layer Pt/TiO2/Pt memory devices were fabricated for investigating their resistive switching characteristics. The statistical switching parameters revealed the enhanced resistive switching performance in the bilayer Pt/TiO2/Co3O4/Pt device, for instance, more centralized operating voltages and current, as well as lower power consumption. The analysis of conductive mechanisms showed that the Schottky emission and Ohmic mechanisms were responsible for the OFF and ON states of the Pt/TiO2/Co3O4/Pt memory devices. The conductive filament mode combined with the fitting results of conductive mechanisms was used to illustrate the resistive switching effect, which provided a microscopic model for a deeper understanding of switching behavior in bilayer devices. Our results indicated that switching properties of TiO2-based resistive random access memory (RRAM) could be improved by inserting a Co3O4 layer.

Automated summary

The study showed that the bilayer Pt/TiO2/Co3O4/Pt device exhibited enhanced resistive switching performance. Analysis indicated that Schottky emission and Ohmic mechanisms were responsible for the switching states. Insertion of a Co3O4 layer improved the switching properties of TiO2-based resistive random access memory (RRAM).