ReS2/h-BN/Graphene Heterostructure Based Multifunctional Devices: Tunneling Diodes, FETs, Logic Gates, and Memory

A 2D heterostructure consisting of few-layer direct bandgap ReS2, a thin h-BN layer, and a monolayer graphene (Gr) for application to various electronic devices is investigated. Metal-insulator-semiconductor (MIS)-type devices with 2D van-der-Waals (vdW) heterostructures are recently studied as important components to realize various multifunctional device applications in analogue and digital electronics. The tunnel diodes of ReS2/h-BN/Gr exhibit light tunable rectifying behaviors with low ideality factors and nearly temperature independent electrical characteristics. The devices behave like conventional MIS-type tunnel diodes for logic gate applications. Furthermore, similar vertical heterostructures are shown to operate in field-effect transistors with a low threshold voltage and a memory device with a large memory gate for future multifunctional device applications.

Automated summary

The study investigates the performance of 2D heterostructures in electronic devices, with ReS2/h-BN/Gr tunnel diodes showing excellent characteristics and potential for use in logic gates. In the future, they are expected to play an important role in multifunctional device applications.