期刊
2D MATERIALS
卷 8, 期 2, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/2053-1583/abd6b3
关键词
2D layered materials; circular photogalvanic effect; third-order nonlinear optical response
资金
- National Key Research and Development Program of China [2020YFA0308800]
- National Natural Science Foundation of China (NSFC) [11725418, 12034001, 91750109, 11674013]
- Beijing Nature Science Foundation [JQ19001]
- Ministry of Science and Technology of China [2016YFA0301004]
- National Basic Research Program of China [2019YFA0308402, 2018YFA0305604]
- China Postdoctoral Innovative Talent Support Program [257090]
This study reports a clear experimental observation of in-plane CPGE in 1T'-MoTe2, which is found to be related to an in-plane internal DC electric field. The circular photogalvanic response is attributed to a third-order nonlinear optical effect involving this DC electric field, consistent with the crystal symmetry of the lattices in both the 1T' and T-d phases of the material.
The two-dimensional layered material MoTe2 has aroused extensive research interests in its rich optoelectronic properties in various phases. One property of particular interest is the circular photogalvanic effect (CPGE): a conventional second order nonlinear optical effect that is related to the chirality of materials. It has been demonstrated in T-d-MoTe2, a type-II topological Weyl semimetal candidate, while it has been unclear so far whether it exists in the semimetallic 1T' phase, another interesting phase that hosts a quantum spin hall state. In this article, we report a clear experimental observation of in-plane CPGE in 1T'-MoTe2. The observation is confirmed under various experimental designs with excitation by normally incident mid-infrared laser, and we find it to be related to an in-plane internal DC electric field. We attribute the circular photogalvanic response to a third-order nonlinear optical effect involving this DC electric field, which is consistent with the crystal symmetry of the lattices and present in both the 1T' and T-d phases of the material.
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