High Current Field Emission from Large-Area Indium Doped ZnO Nanowire Field Emitter Arrays for Flat-Panel X-ray Source Application

Large-area zinc oxide (ZnO) nanowire arrays have important applications in flat-panel X-ray sources and detectors. Doping is an effective way to enhance the emission current by changing the nanowire conductivity and the lattice structure. In this paper, large-area indium-doped ZnO nanowire arrays were prepared on indium-tin-oxide-coated glass substrates by the thermal oxidation method. Doping with indium concentrations up to 1 at% was achieved by directly oxidizing the In-Zn alloy thin film. The growth process was subsequently explained using a self-catalytic vapor-liquid-solid growth mechanism. The field emission measurements show that a high emission current of similar to 20 mA could be obtained from large-area In-doped sample with a 4.8 x 4.8 cm(2) area. This high emission current was attributed to the high crystallinity and conductivity change induced by the indium dopants. Furthermore, the application of these In-doped ZnO nanowire arrays in a flat-panel X-ray source was realized and distinct X-ray imaging was demonstrated.

Automated summary

The research focuses on the application of large-area indium-doped zinc oxide nanowire arrays in flat-panel X-ray sources, aiming to enhance emission current by altering the conductivity and lattice structure. Results show that the high emission current is mainly attributed to the high crystallinity and conductivity change induced by the indium dopants.