Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs

A 16-nm-L-g p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology. The temperature dependence of electrical characteristics for normal MOSFET as well as the quantum transport at cryogenic has been investigated systematically. We demonstrate a good gate-control ability and body effect immunity at cryogenic for the GAA Si NW MOSFETs and observe the transport of two-fold degenerate hole sub-bands in the nanowire (110) channel direction sub-band structure experimentally. In addition, the pronounced ballistic transport characteristics were demonstrated in the GAA Si NW MOSFET. Due to the existence of spacers for the typical MOSFET, the quantum interference was also successfully achieved at lower bias.

Automated summary

In this study, a 16-nm p-type gate-all-around silicon nanowire MOSFET was fabricated using FinFET technology. The electrical characteristics at cryogenic temperatures and quantum transport were systematically investigated. The GAA Si NW MOSFET demonstrated good gate-control ability, immunity to body effects, transport of double degenerate hole sub-bands, and ballistic transport characteristics, with successful quantum interference achieved at lower bias due to the presence of spacers in typical MOSFETs.