期刊
ADVANCED MATERIALS INTERFACES
卷 8, 期 3, 页码 -出版社
WILEY
DOI: 10.1002/admi.202001712
关键词
charge balance; charge mobility; defect passivation; device engineering
资金
- National Research Foundation of Korea (NRF) - Korea government (Ministry of Science and Information & Communication Technology (ICT)) [NRF-2016R1A3B1908431]
This paper summarizes the research status of metal halide perovskite light-emitting diodes, focusing on strategies to improve efficiency through adjusting device architecture and improving crystal quality, as well as discussing the synergistic effects between different strategies at each layer in devices. Perspectives on future research on PeLEDs with a focus on their architecture are also provided.
Metal halide perovskite (MHP) light-emitting diodes (LEDs) have been widely studied and have been reached to >20% external quantum efficiency, owing to their attractive characteristics (e.g., solution processability, tunable bandgap and extremely high color purity, high mobility). During the rapid development of perovskite light-emitting diodes (PeLEDs), modifying the device architecture has been widely studied as well as improving the crystal quality of MHP to achieve near-unity photoluminescence quantum yield. However, efforts in device architecture engineering have received less attention despite their significance. Here, strategies are reviewed to enhance the efficiency of PeLEDs in terms of the device engineering by interfacial charge injection/transport, exciton-quenching blocking, and defect passivation layers for enhancing radiative electron-hole recombination. Strategies are systematically classified for each layer in PeLEDs and discussed the synergetic effect between different strategies. Perspective is also provided on future research on PeLEDs focusing on their architecture.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据