期刊
MICROMACHINES
卷 11, 期 12, 页码 -出版社
MDPI
DOI: 10.3390/mi11121128
关键词
gallium oxide; wide band gap semiconductors; solar-blind detection; atomic layer deposition; thin films; alloying; bandgap
类别
资金
- Engineering and Physical Sciences Research Council (EPSRC) [EP/P00945X/1, EP/M010589/1]
- EPSRC Centre for Doctoral Training in Graphene Technology [EP/L016087/1]
- European Union's Horizon 2020 research and innovation programme [823717 -ESTEEM3]
- EPSRC [EP/M010589/1, EP/P013562/1] Funding Source: UKRI
The suitability of Ti as a band gap modifier for alpha-Ga2O3 was investigated, taking advantage of the isostructural alpha phases and high band gap difference between Ti2O3 and Ga2O3. Films of (Ti,Ga)(2)O-3 were synthesized by atomic layer deposition on sapphire substrates, and characterized to determine how crystallinity and band gap vary with composition for this alloy. We report the deposition of high quality alpha-(TixGa1-x)(2)O-3 films with x = 3.7%. For greater compositions the crystalline quality of the films degrades rapidly, where the corundum phase is maintained in films up to x = 5.3%, and films containing greater Ti fractions being amorphous. Over the range of achieved corundum phase films, that is 0% <= x <= 5.3%, the band gap energy varies by similar to 270 meV. The ability to maintain a crystalline phase at low fractions of Ti, accompanied by a modification in band gap, shows promising prospects for band gap engineering and the development of wavelength specific solar-blind photodetectors based on alpha-Ga2O3.
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