期刊
ACS SUSTAINABLE CHEMISTRY & ENGINEERING
卷 8, 期 49, 页码 17923-17932出版社
AMER CHEMICAL SOC
DOI: 10.1021/acssuschemeng.0c05225
关键词
PEC water splitting; BiVO4 sputtering; V solution annealing; patterned FTO; direct printing
资金
- International Research & Development Program of the National Research Foundation of Korea (NRF) - Ministry of Science and ICT [2019K1A47A02113032]
- Creative Materials Discovery Program through the National Research Foundation of Korea (NRF) - Ministry of Science and ICT [NRF-2018M3D1A1058972]
- National Research Foundation of Korea (NRF) - Korea government (MSIT) [2020R1A2C3006382]
- National Research Foundation of Korea [2020R1A2C3006382] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Bismuth vanadate (BiVO4) is a promising photoanode material; however, its efficiency significantly changes depending on the atomic ratio of Bi/V, and there is no suitable method for synthesizing large-area photoanodes. In this study, an efficient BiVO4 photoanode was fabricated via sputtering, by manipulating the molar ratio of Bi/V with V solution annealing. V solution annealing not only adjusted the atomic ratio of Bi/V but also increased the number of O vacancies, thereby improving the charge-separation and charge-transport efficiencies. Consequently, the photocurrent density of the sputtered photoanode with V solution annealing (BVO-V) was 1.86 mA/cm(2), which is 23 times higher than that of the sputtered photoanode annealed under air conditions (BVO-A, 81.0 mu A/cm(2)). Furthermore, microcone-patterned fluorine-doped SnO2 was fabricated to increase the active area and reduce the high reflectance, owing to the dense deposition because of the sputtering. Thus, the photocurrent density of the MC-BVO was 3.11 mA/cm(2), which is approximately 67% higher than that of BVO-V (1.86 mA/cm(2)).
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