相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Optical and Electronic Properties of Symmetric InAs/(In,Al, Ga)As/InP Quantum Dots Formed by Ripening in Molecular Beam Epitaxy: A Potential System for Broad-Range Single-Photon Telecom Emitters
P. Holewa et al.
PHYSICAL REVIEW APPLIED (2020)
Optical and electronic properties of low-density InAs/InP quantum-dot-like structures designed for single-photon emitters at telecom wavelengths
P. Holewa et al.
PHYSICAL REVIEW B (2020)
Synthesis and systematic optical investigation of selective area droplet epitaxy of InAs/InP quantum dots assisted by block copolymer lithography
Artem Shikin et al.
OPTICAL MATERIALS EXPRESS (2019)
Droplet epitaxy of semiconductor nanostructures for quantum photonic devices
Massimo Gurioli et al.
NATURE MATERIALS (2019)
Carrier relaxation bottleneck in type-II InAs/InGaAlAs/InP(001) coupled quantum dots-quantum well structure emitting at 1.55 mu m
M. Syperek et al.
APPLIED PHYSICS LETTERS (2018)
Demonstration of a self-pulsing photonic crystal Fano laser
Yi Yu et al.
NATURE PHOTONICS (2017)
Selective growth of strained (In)GaAs quantum dots on GaAs substrates employing diblock copolymer lithography nanopatterning
Honghyuk Kim et al.
JOURNAL OF CRYSTAL GROWTH (2017)
Confinement regime in self-assembled InAs/InAlGaAs/InP quantum dashes determined from exciton and biexciton recombination kinetics
L. Dusanowski et al.
APPLIED PHYSICS LETTERS (2017)
Exciton spin relaxation in InAs/InGaAlAs/InP(001) quantum dashes emitting near 1.55μm
M. Syperek et al.
APPLIED PHYSICS LETTERS (2016)
Threshold Characteristics of Slow-Light Photonic Crystal Lasers
Weiqi Xue et al.
PHYSICAL REVIEW LETTERS (2016)
Two-photon interference from a bright single-photon source at telecom wavelengths
Je-Hyung Kim et al.
OPTICA (2016)
Crystallographic dependent in-situ CBr4 selective nano-area etching and local regrowth of InP/InGaAs by MOVPE
N. Kuznetsova et al.
JOURNAL OF CRYSTAL GROWTH (2014)
Phonon-assisted radiative recombination of excitons confined in strongly anisotropic nanostructures
L. Dusanowski et al.
PHYSICAL REVIEW B (2014)
Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices
Mohammed Zahed Mustafa Khan et al.
PROGRESS IN QUANTUM ELECTRONICS (2014)
Carrier relaxation dynamics in InAs/GaInAsP/InP(001) quantum dashes emitting near 1.55 μm
M. Syperek et al.
APPLIED PHYSICS LETTERS (2013)
Impact of wetting-layer density of states on the carrier relaxation process in low indium content self-assembled (In,Ga)As/GaAs quantum dots
M. Syperek et al.
PHYSICAL REVIEW B (2013)
Morphology Control in Block Copolymer Films Using Mixed Solvent Vapors
Kevin W. Gotrik et al.
ACS NANO (2012)
Metal organic vapor-phase epitaxy of InAs/InGaAsP quantum dots for laser applications at 1.5 μm
E. S. Semenova et al.
APPLIED PHYSICS LETTERS (2011)
Atomistic pseudopotential theory of optical properties of exciton complexes in InAs/InP quantum dots
Ming Gong et al.
APPLIED PHYSICS LETTERS (2011)
Temperature dependent photoluminescence of an In(Ga)As/GaAs quantum dot system with different areal density
X. L. Zhou et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2010)
Nanofabrication of III-V semiconductors employing diblock copolymer lithography
Thomas F. Kuech et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2010)
Carrier thermal escape in families of InAs/InP self-assembled quantum dots
Guillaume Gelinas et al.
PHYSICAL REVIEW B (2010)
Solvent-Vapor-Induced Tunability of Self-Assembled Block Copolymer Patterns
Yeon Sik Jung et al.
ADVANCED MATERIALS (2009)
Hybridized quantum dot-wetting layer states in photoluminescence of In(Ga)As/GaAs dot chain samples
V. G. Dorogan et al.
JOURNAL OF APPLIED PHYSICS (2009)
Nanoscale selective growth and optical characteristics of quantum dots on III-V substrates prepared by diblock copolymer nanopatterning
Joo Hyung Park et al.
JOURNAL OF NANOPHOTONICS (2009)
Ordering in thin films of block copolymers: Fundamentals to potential applications
I. W. Hamley
PROGRESS IN POLYMER SCIENCE (2009)
Carrier relaxation dynamics in InAs/InP quantum dots
P. Miska et al.
APPLIED PHYSICS LETTERS (2008)
Intermixing during growth of InAs self-assembled quantum dots in InP: A photoluminescence and tight-binding investigation
C. Dion et al.
PHYSICAL REVIEW B (2008)
Electronic structure of self-assembled InAs/InP quantum dots: Comparison with self-assembled InAs/GaAs quantum dots
Ming Gong et al.
PHYSICAL REVIEW B (2008)
Optical emission from InAs/InP self-assembled quantum dots: evidence for As/P intermixing
A. Lanacer et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2007)
Radiative recombination of excitons in disk-shaped InAs/InP quantum dots
Shinichi Tomimoto et al.
PHYSICAL REVIEW B (2007)
nextnano: General purpose 3-D simulations
Stefan Birner et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2007)
Quantum-dot semiconductor optical amplifiers
Tomoyuki Akiyama et al.
PROCEEDINGS OF THE IEEE (2007)
Development of continuum states in photoluminescence of self-assembled InGaAs/GaAs quantum dots
Yu. I. Mazur et al.
JOURNAL OF APPLIED PHYSICS (2007)
Effect of cap-layer growth rate on morphology and luminescence of InAs/InP(001) quantum dots grown by metal-organic vapor phase epitaxy
A. Michon et al.
JOURNAL OF APPLIED PHYSICS (2006)
Anomalous temperature dependence of photoluminescence peak energy in InAs/InAlAs/InP quantum dots
W Lei et al.
SOLID STATE COMMUNICATIONS (2006)
Temperature-dependent photoluminescence of self-assembled (In,Ga)As quantum dots on GaAs (100):: Carrier redistribution through low-energy continuous states
T Mano et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS (2005)
Role of thin InP cap layer and anion exchange reaction on structural and optical properties of InAs quantum dots on InP (001)
Y Sakuma et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2005)
Approach to wetting-layer-assisted lateral coupling of InAs/InP quantum dots -: art. no. 035342
C Cornet et al.
PHYSICAL REVIEW B (2005)
High-power 1.3 μm InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system
A Wilk et al.
JOURNAL OF CRYSTAL GROWTH (2005)
Site-controlled photoluminescence at telecommunication wavelength from InAs/InP quantum dots
HZ Song et al.
APPLIED PHYSICS LETTERS (2005)
Dynamic saturation of an intersublevel transition in self-organized InAs/InxAl1-xAs quantum dots -: art. no. 205329
E Péronne et al.
PHYSICAL REVIEW B (2003)
Quantum dot amplifiers with high output power and low noise
TW Berg et al.
APPLIED PHYSICS LETTERS (2003)
Families of islands in InAs/InP self-assembled quantum dots:: a census obtained from magneto-photoluminescence
S Raymond et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2003)
Experimental investigation of the effect of wetting-layer states on the gain-current characteristic of quantum-dot lasers
DR Matthews et al.
APPLIED PHYSICS LETTERS (2002)
Lateral-coupling-induced modification of density of states and exciton dynamics in high-density ordered In0.4Ga0.6As/GaAs(311)B quantum dot arrays
S Nishikawa et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS (2002)
Strain engineering of self-organized InAs quantum dots
F Guffarth et al.
PHYSICAL REVIEW B (2001)
Room-temperature operation of InAs quantum-dash lasers on InP (001)
RH Wang et al.
IEEE PHOTONICS TECHNOLOGY LETTERS (2001)
Chemical beam epitaxy growth of self-assembled InAs/InP quantum dots
PJ Poole et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2001)
Band parameters for III-V compound semiconductors and their alloys
I Vurgaftman et al.
JOURNAL OF APPLIED PHYSICS (2001)
The influence of quantum-well composition on the performance of quantum dot lasers using InAs/InGaAs dots-in-a-well (DWELL) structures
GT Liu et al.
IEEE JOURNAL OF QUANTUM ELECTRONICS (2000)
Capture, relaxation, and recombination in two-dimensional quantum-dot superlattices
S Lan et al.
PHYSICAL REVIEW B (2000)