期刊
ADVANCED ENERGY MATERIALS
卷 11, 期 4, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/aenm.202003025
关键词
high rate; MXenes; practical thickness; restacking; supercapacitors
类别
资金
- China Scholarship Council (CSC)
- University of Electronic Science and Technology of China [A1098531023601243]
- National Science Foundation Graduate Research Fellowship [DGE-1646737]
- Fluid Interface Reactions, Structures, and Transport (FIRST) Center, an Energy Frontier Research Center (EFRC) - U.S. Department of Energy, Office of Science, and Office of Basic Energy Sciences
- Fundamental Research (Discipline Arrangement) Project from Shenzhen Science and Technology Innovation Committee [JCYJ20170412154554048]
- Peacock Team Project from Shenzhen Science and Technology Innovation Committee [KQTD2015033110182370]
A novel oxidation method was developed to reduce restacking issue of Ti3C2Tx film, resulting in a hierarchical ion path structure with excellent electrochemical performance, high rate capability, and high volumetric capacitance.
The lengthened ion pathway in restacked 2D materials greatly limits the electrochemical performance of practically dense film electrodes (mass loading >10 mg cm(-2)). Typical strategies such as the insertion of nanomaterials and 3D-structure design is expected to reduce the volumetric capacitance of Ti3C2Tx electrodes, diminishing the dominating advantage of Ti3C2Tx over other electrode materials. Here, a novel, facile, and controllable H2SO4 oxidation method is developed for alleviating the restacking issue of Ti3C2Tx film with few electrochemically inactive side-products such as TiO2. A hierarchical ion path highway in Ti3C2Tx film is fabricated with porous structure, atomic-level increased interlayer spacing, and reduced flake size (through probe-sonication). As a result, ultra-high rate performance is obtained with high volumetric capacitance. For a approximate to 1.1 mu m thick Ti3C2Tx film, capacitance retention of 64% is obtained (208 F g(-1)/756 F cm(-3)) when the scan rate is increased from 5 to 10,000 mV s(-1). Even at higher mass loadings exceeding 12 mg cm(-2) (48 mu m thickness), the rate capability is still comparable to unoptimized Ti3C2Tx electrodes with low mass loading (1 mg cm(-2)). Consequently, a high areal capacitance of approximate to 3.2 F cm(-2) is achieved for pathway-optimized thick Ti3C2Tx film, which is of great significance for practical applications.
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