4.8 Article

Data-Driven Descriptor Engineering and Refined Scaling Relations for Predicting Transition Metal Oxide Reactivity

期刊

ACS CATALYSIS
卷 11, 期 2, 页码 734-742

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acscatal.0c04170

关键词

computational screening; heterogeneous catalysis; ab initio calculation; oxygen evolution reaction; transition metal oxides; compressed sensing; machine learning

资金

  1. Leibniz Supercomputing Centre of the Bavarian Academy of Sciences and Humanities
  2. China Scholarship Council (CSC)

向作者/读者索取更多资源

The study identified descriptors using a compressed sensing approach and algebraic expressions to predict adsorption enthalpies of oxygen evolution reaction on metal oxide catalysts, outperforming single descriptors in accuracy and computational cost. Considering features related to local charge transfer significantly improves refined scaling relations, allowing for the screening of OER electrocatalysts with theoretical overpotential uncertainty similar to the expected DFT error.
Computational screening of metal oxide catalysts is challenging due to their more localized and intricate electronic structure as compared to metal catalysts and the resulting lack of suitable activity descriptors to replace expensive density functional theory (DFT) calculations. By using a compressed sensing approach, we here identify descriptors in the form of algebraic expressions of surface-derived features for predicting adsorption enthalpies of oxygen evolution reaction (OER) intermediates at doped RuO2 and IrO2 electrocatalysts. Our descriptors significantly outperform previously highlighted single descriptors both in terms of accuracy and computational cost. Compared to standard scaling relations that employ the oxygen adsorption enthalpy as a unique reactivity descriptor, our analysis reveals that the consideration of features related to the local charge transfer leads to significantly improved refined scaling relations. These allow us to screen for improved OER electrocatalysts with an uncertainty in the theoretical overpotential similar to the expected intrinsic DFT error of 0.2 V.

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