期刊
SURFACE SCIENCE
卷 707, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.susc.2020.121785
关键词
Highly charged ion; Potential sputtering; Proton sputtering; Water; Silicon; Secondary-ion mass spectrometry
资金
- CREST program Creation of Ultrafast, Ultralow Power, Super-performance Nanodevices and Systems of the Japan Science and Technology Agency
The study found that the proton yield on Si(111)7 x 7 and Si(100)2 x 1 surfaces increases over time when irradiated with slow, highly charged xenon ions. The proton yield on the Si(100)2 x 1 surface is related to HCI irradiation time and temporal variation of H2O coverage. The proton desorption efficiency is highest with Xe50+ compared to Xe29+ and Xe44+.
The proton yields from Si(111)7 x 7 and Si(100)2 x 1 reconstructed surfaces irradiated with slow (nu < 0.25 nu(Bohr)) highly charged Xe ions are obtained. H2O molecules adsorbed over time on the surfaces at room temperature, under ultra-high vacuum can be detected as an increase of the proton yield. For the Si(100)2 x 1 surface, the proton yield with HCI-irradiation time is discussed based on temporal variation of the H2O coverage. The proton desorption efficiency with Xe50+ is more than about ten times and twice as compared with Xe29+ and Xe44+, respectively. For the Si(111)7 x 7 and Si(100)2 x 1 surfaces, the proton yield in each time increases with the charge states q to the power of 6 and 4, respectively, and is changed with time with the power laws held on.
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