期刊
SUPERLATTICES AND MICROSTRUCTURES
卷 151, 期 -, 页码 -出版社
ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
DOI: 10.1016/j.spmi.2021.106819
关键词
Single-electron transistor; Non-equilibrium green function technique; Quantum dot; Quantum transport
资金
- Deanship of Scientific Research at King Khalid University [RGP2/86/42]
The electron transport through a single electron transistor consisting of a quantum dot coupled to two metallic electrodes was studied using the non-equilibrium Green function technique. An analytical approximation of the Meir-Wingreen formula was presented under different conditions to investigate the current-voltage characteristics of the quantum dot.
The electron transport through single electron transistor (SET) consisting of quantum dot (QD) coupled to two metallic electrodes has been studied by employing the non-equilibrium Green function (NEGF) technique. The QD considered in this study has a single energy level and non-interacting electrons. The current-voltage characteristics of QD has been studied by using Meir-Wingreen expression. In this paper, an analytical approximation of Meir-Wingreen formula has been presented with respect to the following conditions: (1) low-temperature limit, (2) finite temperature limit with finite energy vertical bar epsilon - epsilon(d)vertical bar < kT, (3) finite temperature limit with finite bias Gamma < e vertical bar V vertical bar/2 < KT < epsilon(d), and at high temperatures. Furthermore, the derived analytical formulae are employed to investigate the effect of device parameters (energy level, tunneling rate level width, gate voltage, and temperature) on the current-voltage characteristic of SET.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据