期刊
SOLAR ENERGY MATERIALS AND SOLAR CELLS
卷 219, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.solmat.2020.110815
关键词
Passivating contacts; Silicon solar cells; Hydrogenation; Sputtering; Indium-tin-oxide (ITO)
资金
- Swiss Federal Office for Energy [SI/501253-01]
- European Commission [727539]
This paper presents an electron selective passivating contact metallised with a low temperature process for front side applications in crystalline silicon (c-Si) solar cells. The contact structure includes an indium tin oxide (ITO) layer and a hydrogen rich silicon nitride (SiNx: H) layer, aiming to improve the performance of solar cells through low-temperature treatment.
In this contribution, we present an electron selective passivating contact metallised with a low temperature process to target front side applications in crystalline silicon (c-Si) solar cells. In addition to an interfacial silicon oxide (SiOx) and an in-situ phosphorous doped micro-crystalline silicon (mu c-Si(n)) layer, it comprises an ultra -thin indium tin oxide (ITO) layer of 15 nm for lateral conductivity and a hydrogen rich silicon nitride (SiNx: H) layer which serves as hydrogen (H) reservoir and as anti-reflection coating. We use one single thermal treatment for 30 min at 350 degrees C to sinter the screen-printed paste, to recover sputtering damage induced during ITO deposition, and to diffuse hydrogen from the SiNx:H layer towards the c-Si/SiOx interface where it passivates interfacial defects. Applied to symmetrically processed textured samples, we find implied open-circuit voltage (iVOC) > 728 mV for optimal ITO thickness of 15 nm and annealing temperatures of 350 degrees C. The developed stack was applied on the front textured side of co-annealed (800 degrees C) p-type c-Si solar cells in combination with a tunnel oxide hole selective passivating contact on the rear side. We demonstrate solar cells with fill factor (FF) up to 81.9% and an open-circuit voltage (VOC) up to 719 mV. With a short-circuit current density (JSC) of 38.6 mA/cm2, we obtain a final cell efficiency to 22.8%. We find that the annealing of the SiNx:H/ITO stack strongly increases the ITO free carrier density penalizing the solar cell spectral response at high wavelengths.
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