期刊
SENSORS
卷 21, 期 3, 页码 -出版社
MDPI
DOI: 10.3390/s21030805
关键词
CMOS thermal sensor; CMOS built-in sensor; CMOS integrated circuits; measurement of RF CMOS circuits; built-in test and measurement
资金
- Spanish AEI-Agencia Estatal de Investigacion [PID2019-103869RB-C33]
- Spanish Ministry of Science, Innovation and Universities through Agencia Estatal de Investigacion (AEI) [RTI2018-098392B-I00, PCI2020-112028]
The new sensor topology has been experimentally validated as a low-cost, high linearity, and sensitivity approach for testing and monitoring variability in radio-frequency integrated circuits.
A new sensor topology meant to extract figures of merit of radio-frequency analog integrated circuits (RF-ICs) was experimentally validated. Implemented in a standard 0.35 mu m complementary metal-oxide-semiconductor (CMOS) technology, it comprised two blocks: a single metal-oxide-semiconductor (MOS) transistor acting as temperature transducer, which was placed near the circuit to monitor, and an active band-pass filter amplifier. For validation purposes, the temperature sensor was integrated with a tuned radio-frequency power amplifier (420 MHz) and MOS transistors acting as controllable dissipating devices. First, using the MOS dissipating devices, the performance and limitations of the different blocks that constitute the temperature sensor were characterized. Second, by using the heterodyne technique (applying two nearby tones) to the power amplifier (PA) and connecting the sensor output voltage to a low-cost AC voltmeter, the PA's output power and its central frequency were monitored. As a result, this topology resulted in a low-cost approach, with high linearity and sensitivity, for RF-IC testing and variability monitoring.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据