相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Effect of γ-ray irradiation on Schottky and ohmic contacts on AlGaN/GaN hetero-structures
Chandan Sharma et al.
MICROELECTRONICS RELIABILITY (2020)
Fabrication and Analysis of the Current Transport Mechanism of Ni/n-GaN Schottky Barrier Diodes through Different Models
S. Kumar et al.
SEMICONDUCTORS (2020)
Medium Energy Carbon and Nitrogen Ion Beam Induced Modifications in Charge Transport, Structural and Optical Properties of Ni/Pd/n-GaN Schottky Barrier Diodes
Santosh Kumar et al.
MATERIALS (2020)
In Situ Study of Radiation Stability and Associated Conduction Mechanisms of Nb-Doped TiO2/p-Si Heterojunction Diode Under Swift Heavy Ion Irradiation
Subodh Kumar Gautam et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2019)
Electronic excitation induced defect dynamics in HfO2 based MOS devices investigated by in-situ electrical measurements
N. Manikanthababu et al.
APPLIED PHYSICS LETTERS (2018)
In-situ transport and microstructural evolution in GaN Schottky diodes and epilayers exposed to swift heavy ion irradiation
Ashish Kumar et al.
JOURNAL OF APPLIED PHYSICS (2018)
The 2018 GaN power electronics roadmap
H. Amano et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2018)
Surface morphological, structural, electrical and optical properties of GaN-based light-emitting diodes using submicron-scaled Ag islands and ITO thin films
Young-Woong Lee et al.
OPTICAL MATERIALS (2018)
Identification of swift heavy ion induced defects in Pt/n-GaN Schottky diodes by in-situ deep level transient spectroscopy
Ashish Kumar et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2018)
Correlation between structural and optical properties of GaN epi-layers by the cathodoluminescence technique
F. Ben Nasr et al.
EUROPEAN PHYSICAL JOURNAL PLUS (2016)
In Situ Electrical Characteristics of 150 MeV Ag9+ Ion Beam Induced Damage in Si Photo Detector
M. Vinay Kumar et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2016)
Low energy highly charged ion beam facility at Inter University Accelerator Centre: Measurement of the plasma potential and ion energy distributions
T. Sairam et al.
PHYSICS OF PLASMAS (2015)
Dynamics of modification of Ni/n-GaN Schottky barrier diodes irradiated at low temperature by 200 MeV Ag14+ ions
Ashish Kumar et al.
APPLIED PHYSICS LETTERS (2014)
Sulphide passivation of GaN based Schottky diodes
Ashish Kumar et al.
CURRENT APPLIED PHYSICS (2014)
History of GaN
David W. Runton et al.
IEEE MICROWAVE MAGAZINE (2013)
Photoluminescence Study of Gallium Nitride Thin Films Obtained by Infrared Close Space Vapor Transport
Guillermo Santana et al.
MATERIALS (2013)
Electrical and microstructural analyses of 200 MeV Ag14+ ion irradiated Ni/GaN Schottky barrier diode
Ashish Kumar et al.
APPLIED PHYSICS LETTERS (2012)
Barrier characteristics of Pt/Ru Schottky contacts on n-type GaN based on I-V-T and C-V-T measurements
N. Nanda Kumar Reddy et al.
BULLETIN OF MATERIALS SCIENCE (2012)
Current transport mechanisms in Ru/Pd/n-GaN Schottky barrier diodes and deep level defect studies
V. Rajagopal Reddy et al.
SUPERLATTICES AND MICROSTRUCTURES (2012)
250 keV Ar2+ ion beam induced grain growth in tin oxide thin films
T. Mohanty et al.
SURFACE & COATINGS TECHNOLOGY (2009)
Self-organization of 6H-SiC(0001) surface under keV ion irradiation
Y. S. Katharria et al.
JOURNAL OF APPLIED PHYSICS (2007)
Analysis of the carbon-related blue luminescence in GaN
R Armitage et al.
JOURNAL OF APPLIED PHYSICS (2005)
Proton irradiation effects on GaN-based high electron-mobility transistors with Si-doped AlxGa1-xN and thick GaN cap layers
AP Karmarkar et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2004)
Radiation hardness of gallium nitride
A Ionascut-Nedelcescu et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2002)
Junction properties of nickel phthalocyanine thin film devices utilising indium injecting electrodes
TS Shafai et al.
THIN SOLID FILMS (2001)
Ion implantation into GaN
SO Kucheyev et al.
MATERIALS SCIENCE & ENGINEERING R-REPORTS (2001)
Formation, evolution, and annihilation of interstitial clusters in ion-implanted Si
S Libertino et al.
PHYSICAL REVIEW B (2001)
Damage buildup in GaN under ion bombardment
SO Kucheyev et al.
PHYSICAL REVIEW B (2000)