Four-probe sensing of temperature during Joule heating of silicon

We present a four-probe setup for measuring temperature of Joule-heated silicon in two independent ways from the same voltage measurement: a method using the thermal dependence of resistivity and a method based on the measured sheet power density. The two methods are compared to optical temperature measurements made by fitting a gray-body model onto data from a commercial spectrometer. The two four-probe temperature measurements are conducted from 890 K to 1540 K, and they converge at temperatures above 1400 K indicating a high degree of self-consistency.

Automated summary

A four-probe setup was proposed for measuring the temperature of Joule-heated silicon in two independent ways, which were compared to optical temperature measurements. The results showed a high degree of self-consistency between the two methods at temperatures above 1400 K.