期刊
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
卷 218, 期 7, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.202000715
关键词
negative differential resistance; resistance switching; ZnO
资金
- Natural Science Foundation of Henan Province [202300410090]
- Key Scientific Research Projects of Henan Province [21A140005]
- Intelligence Introduction Plan of Henan Province in 2021 [CXJD2021008]
- Plan for Leading Talent of Fundamental Research of the Central China in 2020
The negative differential resistance (NDR) in ZnO/Nb:SrTiO3 heterojunctions is strongly dependent on negative pulse amplitude/width and compliance current. The NDR intensity and location exhibit the same trend when varying the negative pulse amplitude, width, and compliance current, which can be understood from the variance of concentration of ionized oxygen vacancies and the depletion layer width. This will promote the application of NDR devices.
The negative differential resistance (NDR) in ZnO/Nb:SrTiO3 heterojunctions is found to be strongly dependent on negative pulse amplitude/width and compliance current. When a small or short negative pulse is applied, the NDR feature remains almost the same. With the negative pulse amplitude or width increasing, the NDR feature gradually fades down and shifts to a larger negative bias. Meanwhile, the NDR intensity increases markedly without significant shift with increase of the compliance current. Interestingly, the low-resistance state and NDR location are found to exhibit exactly the same trend when varying the negative pulse amplitude, width, and compliance current. The dependence of the NDR intensity and location on the pulse amplitude/width and compliance current can be well understood from the variance of concentration of ionized oxygen vacancies and the depletion layer width, respectively. This will promote the application of NDR devices.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据