Optimization of Near-Surface Quantum Well Processing

Herein, an optimized process flow of near-surface quantum well metal-oxide-semiconductor field-effect transistors (MOSFETs) based on planar layers of metalorganic vapor-phase epitaxy (MOVPE) grown InxGa1-xAs is presented. It is found that by an optimized pre-growth cleaning and post-metal anneal, the quality of the MOS structure can be greatly enhanced. This optimization is a first step toward realization of a scalable platform for topological qubits based on a well-defined network of lateral InxGa1-xAs nanowires grown by selective area growth.

Automated summary

An optimized process flow for near-surface quantum well metal-oxide-semiconductor field-effect transistors (MOSFETs) based on MOVPE-grown InxGa1-xAs layers is presented, showing significant enhancement in MOS structure quality through optimized pre-growth cleaning and post-metal anneal. This optimization marks a first step towards a scalable platform for topological qubits utilizing a well-defined network of lateral InxGa1-xAs nanowires grown by selective area growth.